ION-BEAM-INDUCED RELAXATION OF STRAINED GEXSI1-X LAYERS

Authors
KRINGHOJ P GLASKO JM ELLIMAN RG
Citation
P. Kringhoj et al., ION-BEAM-INDUCED RELAXATION OF STRAINED GEXSI1-X LAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 276-280
Citations number
18
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
96
Issue
1-2
Year of publication
1995
Pages
276 - 280
Database
ISI
SICI code
0168-583X(1995)96:1-2<276:IROSGL>2.0.ZU;2-B
Abstract
The effect of ion irradiation on the strain in GexSi1-x strained layer s is examined as a function of ion-fluence and irradiation temperature . It is shown that irradiation at room temperature causes an increase in the perpendicular strain whereas irradiation at elevated temperatur es causes a decrease in the perpendicular strain. In both cases, subse quent thermal annealing reduces the damage induced component of the st rain. This behaviour is discussed in terms of the nature of the radiat ion damage produced in the different temperature regimes.