2 MEV AS+ IMPLANTATION IN INAS

High energy ion implantation of 2 MeV As+ ions into (100) InAs was inv estigated using Rutherford backscattering spectrometry with 2 MeV Heions. The ion fluence N-I varied over a wide range between 2X10(12) cm (-2) and 5 X 10(16) cm(-2). The relative defect concentration n(pd)d(z ), calculated from the backscattering spectra with the help of the com puter code DICADA2, is compared to the distribution of the electronic and the nuclear energy density obtained from TRIM simulations. It is f ound that the defect mobility and the defect annealing during room tem perature implantation are strongly influenced by the total energy dens ity deposited into electronic processes. A similar behaviour is found for GaAs but not for InP. We believe that in the arsenides the energy deposition into electronic processes reduces the efficiency of the nuc lear energy deposition for producing stable defects.