A. Carnera et al., MEV ENERGY IMPLANTATION OF FE IN INP, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 307-310
High energy (1-2 MeV) Fe implantation in InP was studied by means of S
econdary Ions Mass Spectrometry (SIMS), Rutherford Backscattering Spec
trometry (RES) in channeling conditions, and Transmission Electron Mic
roscopy (TEM). The investigated doses ranged from 1x10(13) cm(-2) to 1
X10(14) cm(-2). The damage production, damage recovery and defect-dopa
nt interactions during various annealing processes were studied. The a
nnealing temperatures varied between 100 and 650 degrees C. A continuo
us buried amorphous layer is formed for implanted doses > 3 x 10(13) c
m(-2). The regrowth of these amorphized layers and its influence on th
e Fe redistribution and defect production mechanisms during annealing
has been carefully investigated.