MEV ENERGY IMPLANTATION OF FE IN INP

Citation
A. Carnera et al., MEV ENERGY IMPLANTATION OF FE IN INP, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 307-310
Citations number
10
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
ISSN journal
0168583X
Volume
96
Issue
1-2
Year of publication
1995
Pages
307 - 310
Database
ISI
SICI code
0168-583X(1995)96:1-2<307:MEIOFI>2.0.ZU;2-J
Abstract
High energy (1-2 MeV) Fe implantation in InP was studied by means of S econdary Ions Mass Spectrometry (SIMS), Rutherford Backscattering Spec trometry (RES) in channeling conditions, and Transmission Electron Mic roscopy (TEM). The investigated doses ranged from 1x10(13) cm(-2) to 1 X10(14) cm(-2). The damage production, damage recovery and defect-dopa nt interactions during various annealing processes were studied. The a nnealing temperatures varied between 100 and 650 degrees C. A continuo us buried amorphous layer is formed for implanted doses > 3 x 10(13) c m(-2). The regrowth of these amorphized layers and its influence on th e Fe redistribution and defect production mechanisms during annealing has been carefully investigated.