SYNTHESIS OF SEMIINSULATING GAAS BY AS IMPLANTATION AND THERMAL ANNEALING - STRUCTURAL AND ELECTRICAL-PROPERTIES

Authors
CLAVERIE A FUJIOKA H LAANAB L LILIENTALWEBER Z WEBER ER
Citation
A. Claverie et al., SYNTHESIS OF SEMIINSULATING GAAS BY AS IMPLANTATION AND THERMAL ANNEALING - STRUCTURAL AND ELECTRICAL-PROPERTIES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 327-330
Citations number
9
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
96
Issue
1-2
Year of publication
1995
Pages
327 - 330
Database
ISI
SICI code
0168-583X(1995)96:1-2<327:SOSGBA>2.0.ZU;2-J
Abstract
High dose As implantation in GaAs followed by annealing at 600 degrees C results in the formation of semi-insulating GaAs layers. These laye rs are relaxed with a homogeneous distribution of metallic As precipit ates similarly to what is observed in GaAs grown by molecular beam epi taxy at about 200 degrees C (LT-MBE-GaAs), after annealing at 600 degr ees C. By selecting the implantation parameters it is possible to adju st the thickness of the subsequent SI layer and to monitor the amount of excess As in the crystal. By selecting the annealing temperature it is possible to fabricate either a material very similar to the as-gro wn LT-MBE-GaAs or a material similar to annealed LT-MBE-GaAs.