W. Wesch et al., HIGH-TEMPERATURE ION-IMPLANTATION OF SILICON-CARBIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 335-338
The damage production in 6H-SiC has been investigated for Ga and Sb im
plantation in the temperature region between 80 K and 1473 K. For this
purpose a high temperature sample holder has been developed. For impl
antation temperatures above 573 K amorphization is avoided even at hig
h ion fluences. The decrease of the defect density with the temperatur
e is accompanied by a shift of the distributions towards the depth ind
icating a change of the nature of the defects. To obtain minimum damag
e implantation temperatures higher than approximate to 1200 K are nece
ssary. The reduction of the damage concentration at higher temperature
s is accompanied by a substitutional incorporation of part of the impl
anted ions, at 700 K 70% of the implanted Sb atoms are incorporated.