HIGH-TEMPERATURE ION-IMPLANTATION OF SILICON-CARBIDE

The damage production in 6H-SiC has been investigated for Ga and Sb im plantation in the temperature region between 80 K and 1473 K. For this purpose a high temperature sample holder has been developed. For impl antation temperatures above 573 K amorphization is avoided even at hig h ion fluences. The decrease of the defect density with the temperatur e is accompanied by a shift of the distributions towards the depth ind icating a change of the nature of the defects. To obtain minimum damag e implantation temperatures higher than approximate to 1200 K are nece ssary. The reduction of the damage concentration at higher temperature s is accompanied by a substitutional incorporation of part of the impl anted ions, at 700 K 70% of the implanted Sb atoms are incorporated.