HIGH-ENERGY ION-IMPLANTATION FOR PROFILED TUB FORMATION AND IMPURITY GETTERING IN DEEP-SUBMICRON CMOS TECHNOLOGY

High energy ion implantation has been utilized to fabricate profiled t ubs and to create gettering sites in deep submicron CMOS devices in bu lk and epitaxial Si. The isolation and latch-up characteristics have b een measured and found to be superior to those of devices in tubs fabr icated by the conventional thermal drive-in method. High energy implan ts into bulk Si produce inferior gettering as deduced from diode leaka ge measurements. Iron gettering to the MeV boron implanted region has been investigated.