ION-INDUCED CURRENT MEASUREMENT FOR OPTIMIZATION OF BURIED IMPLANTED LAYERS AGAINST SOFT ERRORS

Authors
TAKAI M KISHIMOTO T SAYAMA H OHNO Y SONODA K NISHIMURA T KINOMURA A HORINO Y FUJII K
Citation
M. Takai et al., ION-INDUCED CURRENT MEASUREMENT FOR OPTIMIZATION OF BURIED IMPLANTED LAYERS AGAINST SOFT ERRORS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 425-428
Citations number
7
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
96
Issue
1-2
Year of publication
1995
Pages
425 - 428
Database
ISI
SICI code
0168-583X(1995)96:1-2<425:ICMFOO>2.0.ZU;2-K
Abstract
Collection of charge carriers, generated by 2 MeV protons, in n(+)p di odes with buried conductive layers, formed by high-energy B+ implantat ion, has been investigated using nuclear microprobe (i.e., focused ion beam) induced current-measurement. Suppression efficiency of generate d charge carriers was found to depend on the implantation dose for bur ied wells. About 20% of carriers generated by an incident ion beam cou ld be suppressed by formation of a buried layer, while the suppression rate by the buried layers was increased to about 60% by lowering the applied reverse bias down to 1 V.