IMPROVED EFFICIENCY AND STABILITY OF SILICON PHOTOCATHODES BY ELECTROCHEMICAL ETCHING

Authors
MAO D KIM KJ TSUO YS FRANK AJ
Citation
D. Mao et al., IMPROVED EFFICIENCY AND STABILITY OF SILICON PHOTOCATHODES BY ELECTROCHEMICAL ETCHING, Journal of physical chemistry, 99(11), 1995, pp. 3643-3647
Citations number
16
Categorie Soggetti
Chemistry Physical
Journal title
Journal of physical chemistry → ACNP
ISSN journal
00223654
Volume
99
Issue
11
Year of publication
1995
Pages
3643 - 3647
Database
ISI
SICI code
0022-3654(1995)99:11<3643:IEASOS>2.0.ZU;2-7
Abstract
The photoelectrochemical behavior of electrochemically etched Si catho des contacting a nonaqueous redox electrolyte is described. The electr ochemically etched Si electrodes exhibit higher energy conversion effi ciencies than Si electrodes chemically treated in HF solution. The por ous Si layer formed during electrochemical etching plays an important role in suppressing surface recombination and stabilizing the Si elect rodes against photocorrosion.