P. Gavrilovic et al., BROADENING OF THE BELOW-THRESHOLD NEAR-FIELD PROFILE OF GAAS QUANTUM-WELL LASERS DUE TO PHOTON RECYCLING, IEEE journal of quantum electronics, 31(4), 1995, pp. 623-626
The subthreshold near-field profile of single quantum well laser diode
s was studied experimentally and theoretically. Wide gain-guided strip
es as well as single lateral mode ridge-waveguide diodes were investig
ated. In both types of device, the measured width of the near-field wa
s significantly wider than the width predicted by the conventional the
ory which includes ambipolar carrier diffusion as the only spatial bro
adening mechanism. A new model that invokes close to 100% efficient ph
oton recycling was developed to explain the observed near-field profil
es.