BROADENING OF THE BELOW-THRESHOLD NEAR-FIELD PROFILE OF GAAS QUANTUM-WELL LASERS DUE TO PHOTON RECYCLING

Authors
GAVRILOVIC P WOBER M MEEHAN K ONEILL MS
Citation
P. Gavrilovic et al., BROADENING OF THE BELOW-THRESHOLD NEAR-FIELD PROFILE OF GAAS QUANTUM-WELL LASERS DUE TO PHOTON RECYCLING, IEEE journal of quantum electronics, 31(4), 1995, pp. 623-626
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE journal of quantum electronics → ACNP
ISSN journal
00189197
Volume
31
Issue
4
Year of publication
1995
Pages
623 - 626
Database
ISI
SICI code
0018-9197(1995)31:4<623:BOTBNP>2.0.ZU;2-O
Abstract
The subthreshold near-field profile of single quantum well laser diode s was studied experimentally and theoretically. Wide gain-guided strip es as well as single lateral mode ridge-waveguide diodes were investig ated. In both types of device, the measured width of the near-field wa s significantly wider than the width predicted by the conventional the ory which includes ambipolar carrier diffusion as the only spatial bro adening mechanism. A new model that invokes close to 100% efficient ph oton recycling was developed to explain the observed near-field profil es.