HIGH-POWER DEPOSITION AND ANALYTICS OF AMORPHOUS-SILICON CARBIDE FILMS

Authors
HEYNER R MARX G
Citation
R. Heyner et G. Marx, HIGH-POWER DEPOSITION AND ANALYTICS OF AMORPHOUS-SILICON CARBIDE FILMS, Thin solid films, 258(1-2), 1995, pp. 14-20
Citations number
24
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
258
Issue
1-2
Year of publication
1995
Pages
14 - 20
Database
ISI
SICI code
0040-6090(1995)258:1-2<14:HDAAOA>2.0.ZU;2-J
Abstract
The present work shows the investigations of a-SiC(N,O):H thin films p roduced by d.c. plasma-enhanced chemical vapor deposition under high p ower conditions. In contrast to the traditional process we use liquid precursors (hexamethyldisiloxane, hexamethyldisilazane) diluted in arg on or nitrogen for decomposition in the glow discharge. Films were ana lysed by different methods with regards to their composition and struc ture (electron probe microanalysis, X-ray photoelectron spectroscopy, glow discharge optical emission spectroscopy, infrared spectroscopy).