LASER REACTIVE ABLATION DEPOSITION OF TITANIUM CARBIDE FILMS

Authors
LEGGIERI G LUCHES A MARTINO M PERRONE A MAJNI G MENGUCCI P MIHAILESCU IN
Citation
G. Leggieri et al., LASER REACTIVE ABLATION DEPOSITION OF TITANIUM CARBIDE FILMS, Thin solid films, 258(1-2), 1995, pp. 40-45
Citations number
18
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
258
Issue
1-2
Year of publication
1995
Pages
40 - 45
Database
ISI
SICI code
0040-6090(1995)258:1-2<40:LRADOT>2.0.ZU;2-D
Abstract
Titanium carbide films were deposited on silicon wafers by XeCl (308 n m) excimer laser ablation of titanium in low pressure (10(-3) mbar) me thane atmosphere. Series of 10 000 pulses at the repetition rate of 8 Hz were directed to the target surface. The fluence was set at about 5 J cm(-2). Pulse duration was about 30 ns. The deposited films were ch aracterized by different techniques (X-ray diffraction, scanning elect ron microscopy and Rutherford backscattering spectrometry).