PREPARATION OF SIC FILMS BY SOLID-STATE SOURCE EVAPORATION

SiC thin films on Si(111) were grown using solid state evaporation at relatively low temperatures, Growth rates of 3-10 nm min(-1) have been achieved at 750-900 degrees C. Results obtained from IR spectroscopy, Auger electron spectroscopy and X-ray diffraction indicate good cryst alline growth at T > 800 degrees C in the case of a stoichiometric com position. The crystallinity was found to be deteriorated in layers wit h excess Si or C. In addition, shifts in the IR absorption peak indica te that the non-stoichiometric layers were highly stressed. Annealing of non-stoichiometric layers shifts the peak to the position obtained for stoichiometric layers.