LOW-TEMPERATURE SYNTHESIS OF PB1-XLAX(ZR1-YTIY)(1-X 4)O-3 FILMS BY PULSED-LASER DEPOSITION/

Low temperature (450 degrees C) synthesis of the Pb1-xLax(Zr1-yTiy)(1- x/4)O-3 films has been reached by systematically adjusting the deposit ion parameters in the pulsed laser deposition process. Only the films of pure perovskite structure possess high epsilon(r) and Q(c) values. The formation of the perovskite structure has been enhanced by utilizi ng a platinum coating on the Si substrate and by starting with a compo sition containing no Zr4+ ions. The presence of either the rutile (TiO 2) or the pyrochlore (pi) phase, which substantially degrades the elec trical behavior of the films, has been markedly suppressed by depositi ng at low repetition rate and by quenching the films immediately after deposition. Thus obtained films possess good dielectric properties (e psilon(r) = 1 346 at 10 KHz) and charge storage density (Q(c) = 5.4 mu C cm(-2)).