INTERFACE PROPERTIES OF A-SI-H A-SICX-H SUPERLATTICE/

Measurements of IR spectra and low energy absorption, using the consta nt photocurrent method, have been carried out for a-Si:H/a-SiCx:H supe rlattices fabricated by an r.f. plasma deposition technique. It has be en found that there exist high concentrations of SI-H bonds and high c oncentration of Si-C bonds at a-Si:H-a-SiCx:H interfaces. The interfac ial hydrogen shows a lower thermal stability than that of the hydrogen in the bulk materials. A possible microscopic mechanism of interfacia l defects in the a-Si:H/a-SiCx:H superlattices is discussed.