INDIUM TIN OXIDE ON INP BY PULSED-LASER DEPOSITION

Indium tin oxide (ITO) films with a resistivity of the order of 6 x 10 (-4) Omega cm were deposited at room temperature on InP by pulsed lase r ablation. The resistivity of the films was further reduced to less t han 2 x 10(-4) Omega cm if the deposition was done at a substrate temp erature of 310 degrees C. The enhanced blue response of the photovolta ic device of ITO/InP deposited at room temperature indicated improved collection efficiency near the ITO-InP interface. The dark current-vol tage measurements indicated higher excess current at lower bias for th e devices fabricated at 310 degrees C.