RADIATION-DAMAGE IN INDIUM TIN OXIDE (ITO) LAYERS

Authors
MORGAN DV SALEHI A ALIYU YH BUNCE RW DISKETT D
Citation
Dv. Morgan et al., RADIATION-DAMAGE IN INDIUM TIN OXIDE (ITO) LAYERS, Thin solid films, 258(1-2), 1995, pp. 283-285
Citations number
9
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
258
Issue
1-2
Year of publication
1995
Pages
283 - 285
Database
ISI
SICI code
0040-6090(1995)258:1-2<283:RIITO(>2.0.ZU;2-V
Abstract
The effects of proton damage on transparent conducting indium tin oxid e (ITO) layers were investigated by electrical and optical techniques. ITO layers were found to be highly resistant to proton damage for flu ences up to 10(16) ions cm(-2). For fluences greater than 10(16) cm(-2 ) the resistivity rises rapidly with a corresponding degradation of th e transmittance.