ENHANCED STARK SHIFT IN GAAS ALGAAS STEP QUANTUM-WELL UNDER AN APPLIED ELECTRIC-FIELD/

Citation
Jw. Ma et al., ENHANCED STARK SHIFT IN GAAS ALGAAS STEP QUANTUM-WELL UNDER AN APPLIED ELECTRIC-FIELD/, Chinese Physics Letters, 12(2), 1995, pp. 102-105
Citations number
12
Categorie Soggetti
Physics
Journal title
ISSN journal
0256307X
Volume
12
Issue
2
Year of publication
1995
Pages
102 - 105
Database
ISI
SICI code
0256-307X(1995)12:2<102:ESSIGA>2.0.ZU;2-I
Abstract
Theoretical calculations of the quantum confined Stark shift for the f irst heavy hole exciton (hh1-e1) in step quantum well are given. A sig nificant change in Stark shift is achieved in specially stepped potent ial shape, which is more than two times larger than the conventional r ectangular quantum well. The structure has the advantage of a large ch ange in absorption, which is one of the best candidates for the optica l modulators utilizing the quantum confined Stark effect (QCSE) in GaA s/AlGaAs. Relations between QCSE and stepped structure are discussed i n the optimization for large Stark shift.