RADIATION HARDNESS STUDIES ON SILICON DETECTORS IN FAST-NEUTRON FIELDS

Authors
ANGELESCU T CHEREMUKHIN AE GHETE VM GHIORDANESCU N GOLUTVIN IA LAZANU S LAZANU I MIHUL A RADU A SUSOVA NY VASILESCU A ZAMYATIN NI
Citation
T. Angelescu et al., RADIATION HARDNESS STUDIES ON SILICON DETECTORS IN FAST-NEUTRON FIELDS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 357(1), 1995, pp. 55-63
Citations number
23
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
357
Issue
1
Year of publication
1995
Pages
55 - 63
Database
ISI
SICI code
0168-9002(1995)357:1<55:RHSOSD>2.0.ZU;2-E
Abstract
Electrical and alpha-particle PHA damage tests for ELMA and SGS silico n detectors irradiated at two different fast neutron facilities, in th e range of fluences from 10(10) to 10(15) n/cm(2) are presented. Resul ts on depletion voltage, alpha damage constants and self-annealing are discussed. Supplementary damage effects due to nuclear reactions are evaluated, The spread of the data in the self-annealing corrected alph a damage constant versus hardness parameter plot shows the difficulty in comparing the results obtained in different neutron environments. A systematics is however possible, in the framework of standardization of the ''1 MeV equivalent'' neutron spectrum.