MAGNETIC AND ELECTRONIC-PROPERTIES OF SN1-XGDXTE

Authors
STORY T GORSKA M ARCISZEWSKA M GRODZICKA E GOLACKI Z GALAZKA RR
Citation
T. Story et al., MAGNETIC AND ELECTRONIC-PROPERTIES OF SN1-XGDXTE, Journal of magnetism and magnetic materials, 140, 1995, pp. 2041-2042
Citations number
6
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Journal of magnetism and magnetic materials → ACNP
ISSN journal
03048853
Volume
140
Year of publication
1995
Part
3
Pages
2041 - 2042
Database
ISI
SICI code
0304-8853(1995)140:<2041:MAEOS>2.0.ZU;2-T
Abstract
Magnetic susceptibility, electron paramagnetic resonance and transport properties of Sn1-xGdxTe semimagnetic semiconductor with 0.04 less th an or equal to x less than or equal to 0.07 were investigated as a fun ction of carrier concentration. For crystals with x < 0.05, an abrupt increase of antiferromagnetic interspin interactions was found in samp les with carrier concentration p = p() = (2.5-3.5) X 10(20) cm(-3) as compared to samples with p > p().