YBA2CU3O7-X FILMS ON OFF-AXIS Y-ZRO2 SUBSTRATES USING Y-ZRO2 OR Y2O3 BARRIER LAYERS

YBa2CU3O7-x (YBCO) and barrier layer films were deposited on single-cr ystal (Y2O3)(0.09)(ZrO2)(0.91) substrates cut between 3.6 and 35.7 deg rees off-axis from the (001) planes. The barrier layers were (Y2O3)(0. 065)(Y-ZrO2)(0.935)(Y-ZrO2), Y2O3, Of multilayered structures of Y-ZrO 2 and Y2O3. X-ray diffraction showed that the Y-ZrO2 and Y2O3 barrier layers generally grew epitaxially on the off-axis substrates, with the (001) barrier layer film planes being parallel to those of the substr ate, and the [100] directions being parallel. YBCO films deposited on Y2O3 barrier layers also showed epitaxy with the YBCO (001) planes bei ng nearly parallel to the substrate (001) planes, even for miscuts up to 35.7 degrees. In contrast, the (001) planes of YBCO films deposited on Y-ZrO2 barrier layers were almost parallel to the substrate surfac e, not the (001) substrate planes. However, YBCO films on Y-ZrO2 films maintained particular in-plane epitaxial orientations with respect to the substrate. The YBCO full-width at half-maximum (FWHM) x-ray peaks were slightly narrower (0.8 degrees) on Y2O3 barrier layers than on Y -ZrO2 layers (1.3 degrees). The electrical resistivity versus temperat ure behavior of the YBCO/Y2O3 films was consistent with increased,grai n boundary scattering as the degree of substrate miscut increased, whe reas YBCO/Y-ZrO2 films' resistivities showed less sensitivity to subst rate miscut, consistent with the loss of epitaxy.