A theoretical framework describing trapping, diffusion, and desorption
of tritium from vapor-deposited beta-silicon carbide has been propose
d and an analytical version of this model was derived. This analytical
model was used to extract trapping, diffusion, and desorption paramet
ers from a limited part of the experimental data set. The predictive c
apability of the resulting parameter-free model was then tested by cal
culating the time-dependent release behavior for the high-temperature
regimes. These results generally agreed with the release data, support
ing the suitability of that approach. Tritium trapping was found to be
strong. Both bulk diffusion and surface desorption make comparable co
ntributions to tritium release from the silicon carbide. Improvements
beyond the present analytical model, such as dynamical detrapping, can
be achieved with the proposed framework.