Side-by-side irradiation of stoichiometric MgAl2O4 and alpha-Al2O3 in
JOYO shows that the radiation-induced microstructural evolution to exp
osure of less than or equal to 6 dpa proceeds by very different paths
in these two materials. The large difference in dislocation loop evolu
tion appears to account for the ease of void swelling in alpha-Al2O3 a
nd the strong resistance to void formation in MgAl2O4. Irradiation of
MgAl2O4 to much higher exposure (22-230 dpa) in FFTF confirms the deta
ils of the dislocation evolution, which involves a progressive change
in Burgers vector and habit plane as interstitial loops increase in si
ze. Constraints unique to the MgAl2O4 crystal structure do not allow t
he formation of dislocation network structures that favor swelling.