IN-SITU MEASUREMENT OF RADIATION-INDUCED CONDUCTIVITY OF THIN-FILM CERAMICS

A test chamber has been constructed to measure the in-situ DC electric al conductivity of ceramic thin films during ion irradiation. The film s can be irradiated by three separate ion beams simultaneously with su fficient energy to pass through the films. The radiation induced condu ctivity of a thin (similar to 1.5 mu m) Al2O3 film on tantalum was mea sured at ionization rates between 10(3) and 10(6) Gy/s. Radiation-indu ced conductivity comparable to that previously reported in bulk alumin a was observed. Prolonged irradiation at elevated temperature and unde r an applied electric field resulted in a permanent increase in the co nductance of the film. The test chamber is described and some prelimin ary results are given.