WAFER BONDING INDUCED DEGRADATION OF THERMAL SILICON DIOXIDE LAYERS ON SILICON

Authors
AFANASEV VV ERICSSON P BENGTSSON S ANDERSSON MO
Citation
Vv. Afanasev et al., WAFER BONDING INDUCED DEGRADATION OF THERMAL SILICON DIOXIDE LAYERS ON SILICON, Applied physics letters, 66(13), 1995, pp. 1653-1655
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
13
Year of publication
1995
Pages
1653 - 1655
Database
ISI
SICI code
0003-6951(1995)66:13<1653:WBIDOT>2.0.ZU;2-Z