ELECTRON-BEAM IRRADIATION OF N-TYPE POROUS SILICON OBTAINED BY PHOTOELECTROCHEMICAL ETCHING

Authors
MAURICE JL RIVIERE A ALAPINI A LEVYCLEMENT C
Citation
Jl. Maurice et al., ELECTRON-BEAM IRRADIATION OF N-TYPE POROUS SILICON OBTAINED BY PHOTOELECTROCHEMICAL ETCHING, Applied physics letters, 66(13), 1995, pp. 1665-1667
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
13
Year of publication
1995
Pages
1665 - 1667
Database
ISI
SICI code
0003-6951(1995)66:13<1665:EIONPS>2.0.ZU;2-U