MUON STATES IN POLYCRYSTALLINE AND AMORPHOUS-SILICON

Citation
Ea. Davis et al., MUON STATES IN POLYCRYSTALLINE AND AMORPHOUS-SILICON, Philosophical transactions-Royal Society of London. Physical sciences and engineering, 350(1693), 1995, pp. 227-235
Citations number
15
Categorie Soggetti
Multidisciplinary Sciences
ISSN journal
09628428
Volume
350
Issue
1693
Year of publication
1995
Pages
227 - 235
Database
ISI
SICI code
0962-8428(1995)350:1693<227:MSIPAA>2.0.ZU;2-U
Abstract
Muons implanted into polycrystalline and amorphous silicon have been s tudied by transverse-field precession and longitudinal-field repolariz ation techniques in order to determine the relative fractions and natu re of the diamagnetic and paramagnetic trapping sites. A cusp-like dip in the repolarization curves for polycrystalline material is associat ed with bond-centre muonium and a similar but weaker feature in the am orphous phase is tentatively ascribed to the same species. The relevan ce of the data to potential sites for hydrogen and its diffusion is di scussed.