Ea. Davis et al., MUON STATES IN POLYCRYSTALLINE AND AMORPHOUS-SILICON, Philosophical transactions-Royal Society of London. Physical sciences and engineering, 350(1693), 1995, pp. 227-235
Muons implanted into polycrystalline and amorphous silicon have been s
tudied by transverse-field precession and longitudinal-field repolariz
ation techniques in order to determine the relative fractions and natu
re of the diamagnetic and paramagnetic trapping sites. A cusp-like dip
in the repolarization curves for polycrystalline material is associat
ed with bond-centre muonium and a similar but weaker feature in the am
orphous phase is tentatively ascribed to the same species. The relevan
ce of the data to potential sites for hydrogen and its diffusion is di
scussed.