TRASIM - COMPACT AND EFFICIENT 2-DIMENSIONAL TRANSIENT SIMULATOR FOR ARBITRARY PLANAR SEMICONDUCTOR-DEVICES

Citation
Ms. Obrecht et al., TRASIM - COMPACT AND EFFICIENT 2-DIMENSIONAL TRANSIENT SIMULATOR FOR ARBITRARY PLANAR SEMICONDUCTOR-DEVICES, IEEE transactions on computer-aided design of integrated circuits and systems, 14(4), 1995, pp. 447-458
Citations number
19
Categorie Soggetti
Computer Application, Chemistry & Engineering","Computer Science Hardware & Architecture
ISSN journal
02780070
Volume
14
Issue
4
Year of publication
1995
Pages
447 - 458
Database
ISI
SICI code
0278-0070(1995)14:4<447:T-CAE2>2.0.ZU;2-I
Abstract
A new software tool TRASIM (Two-Dimensional Transient Simulator) has b een developed for arbitrary, planar semiconductor devices. A finite di fference technique is employed with a modified, decoupled Gummel-like method. The memory requirements are reduced significantly compared to the conventionally used Newton-like methods. TRASIM exhibits a good st ability and convergence rate, and user interaction with the computatio nal process is significantly reduced. Low memory requirements and effi ciency make the method attractive for the future 3-D applications. The software uses the drift-diffusion model, with up-to-date mobility and lifetime models. External RC-chains may be connected to device electr odes. Numerical examples are presented illustrating the advantages of the modified Gummel method over the Newton method, for transient simul ation.