DEPENDENCE OF DAMAGE AND STRAIN ON THE TEMPERATURE OF SI IRRADIATION IN EPITAXIAL GE0.10SI0.90 FILMS ON SI(100)

Authors
LIE DYC SONG JH VANTOMME A EISEN F NICOLET MA THEODORE ND CARNS TK WANG KL
Citation
Dyc. Lie et al., DEPENDENCE OF DAMAGE AND STRAIN ON THE TEMPERATURE OF SI IRRADIATION IN EPITAXIAL GE0.10SI0.90 FILMS ON SI(100), Journal of applied physics, 77(6), 1995, pp. 2329-2338
Citations number
52
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
6
Year of publication
1995
Pages
2329 - 2338
Database
ISI
SICI code
0021-8979(1995)77:6<2329:DODASO>2.0.ZU;2-F