OXIDE TRAP RELAXATION SPECTROSCOPY - A NEW DIFFERENCE METHOD TO DETERMINE TRAP IN OXIDIZED SILICON

Citation
Ch. Tan et al., OXIDE TRAP RELAXATION SPECTROSCOPY - A NEW DIFFERENCE METHOD TO DETERMINE TRAP IN OXIDIZED SILICON, Journal of applied physics, 77(6), 1995, pp. 2576-2581
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
77
Issue
6
Year of publication
1995
Pages
2576 - 2581
Database
ISI
SICI code
0021-8979(1995)77:6<2576:OTRS-A>2.0.ZU;2-F