THO GROWTH OF GAF3 FILMS ON GAAS(11O) AT ELEVATED-TEMPERATURES STUDIED WITH SOFT-X-RAY PHOTOELECTRON-SPECTROSCOPY

Authors
SIMPSON WC DURBIN TD VAREKAMP PR YARMOFF JA
Citation
Wc. Simpson et al., THO GROWTH OF GAF3 FILMS ON GAAS(11O) AT ELEVATED-TEMPERATURES STUDIED WITH SOFT-X-RAY PHOTOELECTRON-SPECTROSCOPY, Journal of applied physics, 77(6), 1995, pp. 2751-2758
Citations number
45
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
6
Year of publication
1995
Pages
2751 - 2758
Database
ISI
SICI code
0021-8979(1995)77:6<2751:TGOGFO>2.0.ZU;2-2