THE EPITAXIAL-GROWTH OF EVAPORATED CU CAF2 BILAYERS ON SI(111)/

Authors
MATTOSO N MOSCA DH MAZZARO I TEIXEIRA SR SCHREINER WH
Citation
N. Mattoso et al., THE EPITAXIAL-GROWTH OF EVAPORATED CU CAF2 BILAYERS ON SI(111)/, Journal of applied physics, 77(6), 1995, pp. 2831-2833
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
6
Year of publication
1995
Pages
2831 - 2833
Database
ISI
SICI code
0021-8979(1995)77:6<2831:TEOECC>2.0.ZU;2-L