LOW-NOISE 9-GHZ SAPPHIRE RESONATOR-OSCILLATOR WITH THERMOELECTRIC TEMPERATURE STABILIZATION AT 300 KELVIN

Citation
Me. Tobar et al., LOW-NOISE 9-GHZ SAPPHIRE RESONATOR-OSCILLATOR WITH THERMOELECTRIC TEMPERATURE STABILIZATION AT 300 KELVIN, IEEE microwave and guided wave letters, 5(4), 1995, pp. 108-110
Citations number
NO
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
10518207
Volume
5
Issue
4
Year of publication
1995
Pages
108 - 110
Database
ISI
SICI code
1051-8207(1995)5:4<108:L9SRWT>2.0.ZU;2-8
Abstract
This letter reports on an X-band microwave oscillator incorporating a room temperature thermoelectric stabilized sapphire resonator operatin g at 9.00000 GHz. With a Galani type stabilization scheme we have meas ured a reduced single sideband phase noise of about -124 dBc/Hz at 1 k Hz with a f(-3) dependence, The measurement was limited by the flicker noise of the phase detector in the feedback electronics, The frequenc y stability was also measured; at an integration time of 0.1 seconds a delta f/f of about 10(-11) with a tau(0.7) dependence was measured, T he frequency drift strongly correlated with ambient temperature fluctu ations.