A 60-GHZ MMIC-COMPATIBLE TED-OSCILLATOR

Experimental results achieved with planar GaAs transferred electron os cillators at V-band frequencies are reported in this contribution, The active devices are MESFET-Like structures with a Schottky-gate contro lling the electron injection into the drift region, The electron injec tion is adjusted to a level yielding a frequency independent negative differential resistance which is exploited for millimeter-wave power g eneration. The highest measured CW output power and efficiency are 6.7 2 mW and 1.3% at 60.33 GHz, respectively, These results are comparable to those obtained with transistor oscillators which are much more dif ficult to fabricate due to their extremely small dimensions in the 0.1 mu m range.