A MONOLITHIC HBT-REGULATED HEMT LNA BY SELECTIVE MBE

We demonstrate here the monolithic integration of operational amplifie r and a HEMT low-noise amplifier to achieve an elegant single-chip sol ution to the problem of HEMT current regulation. We have developed a n ovel method of achieving monolithic HEMT-HBT integration by selective MBE and a unique merged-processing technology. Pseudomorphic 0.2 mu m gate-length InGaAs-GaAs-AlGaAs HEMT's and 2 x 10 mu m(2) GaAs-AlGaAs-I nGaAs HBT devices have been incorporated into the same microwave circu it for the first time with no degradation in the intrinsic device perf ormance of either device technology.