ION-BEAM-ACTIVATED PROCESSES ON THE SURFACES OF SOLIDS

The paper presents an overview of results concerning phenomena related to ion-beam-activated deposition of thin films in the case when the a mount of replenished impurities is larger than the amount of sputtered atoms. Metallic films were sputter-deposited on silicon during simult aneous He+, Ne+, Ar+ high-energy (50-175 keV) irradiation. It is shown that high-energy ion-activated oxygen adsorption at the silicon-silve r interface from residual gases depends on ion mass, energy and ion fl ux density. The critical value of electronic energy deposition rate (1 .2 x 10(21) eV cm(-3) s(-1)) when oxygen removal prevails on the ion-a ctivated adsorption was found to be common for all ions studied. A phe nomenological model describing ion-activated oxygen adsorption is prop osed. The TRIM calculations and ion-induced integral stress measuremen ts in silicon substrate were used to explain formation of the silicon- enriched region in the mixed Ag-Si layer.