The results of studying GaAs samples with built-in pi-v junctions as t
he base for the construction of radiation-resistant coordinate-sensiti
ve detectors are presented. The GaAs samples have been exposed to the
beam of the linear proton accelerator, using an Al target for neutron
production. The I-V characteristics of GaAs samples have been analysed
to investigate the change in their properties. The study of the radia
tion resistance of the GaAs samples has shown that their main characte
ristics (charge collection efficiency, signal-to-noise ratio) are degr
aded by less than 20% at the integral neutron fluence of 1.2 x 10(15)
cm(-2).