RADIATION-RESISTANCE OF GAAS STRUCTURES BASED ON PI-NU JUNCTIONS

The results of studying GaAs samples with built-in pi-v junctions as t he base for the construction of radiation-resistant coordinate-sensiti ve detectors are presented. The GaAs samples have been exposed to the beam of the linear proton accelerator, using an Al target for neutron production. The I-V characteristics of GaAs samples have been analysed to investigate the change in their properties. The study of the radia tion resistance of the GaAs samples has shown that their main characte ristics (charge collection efficiency, signal-to-noise ratio) are degr aded by less than 20% at the integral neutron fluence of 1.2 x 10(15) cm(-2).