MULTILEVEL MONOLITHIC INDUCTORS IN SILICON TECHNOLOGY

Authors
SOYUER M BURGHARTZ JN JENKINS KA PONNAPALLI S EWEN JF PENCE WE
Citation
M. Soyuer et al., MULTILEVEL MONOLITHIC INDUCTORS IN SILICON TECHNOLOGY, Electronics Letters, 31(5), 1995, pp. 359-360
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
5
Year of publication
1995
Pages
359 - 360
Database
ISI
SICI code
0013-5194(1995)31:5<359:MMIIST>2.0.ZU;2-9
Abstract
Multilevel monolithic inductors implemented in a standard BiCMOS techn ology are presented. Use of top metal layers shunted with vias provide s Q values approaching 10 at 2.4GHz and above 6 at 900MHz for a 2nH in ductor. There is no modification to the conventional wiring metallurgy and no need for extra processing steps.