HIGH-PERFORMANCE AL-FREE IN0.75GA0.25P INP/INXGA1-XAS/INP (X-GREATER-THAN-OR-EQUAL-TO-53-PERCENT) BACKSIDE-DOPED SPLIT-CHANNEL HFETS WITH 0.25-MU-M T-GATES/

Authors
KUSTERS AM PULS C WULLER R BEHRES A KOHL A SOMMER V HEIME K
Citation
Am. Kusters et al., HIGH-PERFORMANCE AL-FREE IN0.75GA0.25P INP/INXGA1-XAS/INP (X-GREATER-THAN-OR-EQUAL-TO-53-PERCENT) BACKSIDE-DOPED SPLIT-CHANNEL HFETS WITH 0.25-MU-M T-GATES/, Electronics Letters, 31(5), 1995, pp. 409-411
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
5
Year of publication
1995
Pages
409 - 411
Database
ISI
SICI code
0013-5194(1995)31:5<409:HAII(>2.0.ZU;2-E
Abstract
High-performance pseudomorphic InPiIn(x)Ga(1-x)As/InP backside-doped s plit-channel heterostructure field-effect transistors (BDSCh-HFETs) wi th a strained undoped In0.75Ga0.25P Schottky-barrier enhancement layer are reported. Devices with mushroom-shaped gates (L(G) = 0.25 mu m) d emonstrated at 300K maximum extrinsic transconductances of g(m) = 510 mS/mm and current cutoff frequencies of f(T) = 102GHz coupled with off -state drain-source breakdown voltages of V-DSbr = 10V. At 18GHz a uni lateral power gain of 25.6dB was measured, corresponding to f(max) > 2 00GHz.