TRANSIENT SIMULATION OF HETEROJUNCTION PHOTODIODES .1. COMPUTATIONAL METHODS

A novel approach is presented for incorporating the transient solution of one-dimensional semiconductor drift-diffusion equations within a g eneral circuit simulation tool. This approach allows simple representa tion of localized carrier transport models of simulated devices throug h equivalent circuit elements such as voltage controlled current sourc es and capacitors. It also lends itself to mixed-mode transient simula tion of devices and circuits. The utility of the new Simulation approa ch in state-of-the-art device design is demonstrated by the transient response analysis of a GaAs heterojunction p-i-n photodiode, and by th e time-domain analysis of an integrated photoreceiver circuit.