Citation
Ys. Tang et al., RAMAN-SPECTROSCOPY OF DRY-ETCHED SI-SI1-XGEX QUANTUM DOTS, Solid state communications, 94(5), 1995, pp. 369-372
Citations number
20
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
94
Issue
5
Year of publication
1995
Pages
369 - 372
Database
ISI
SICI code
0038-1098(1995)94:5<369:RODSQD>2.0.ZU;2-S
Abstract
Si-S1-xGex (x=0.2 similar to 0.3) quantum dots of 50 similar to 60nm i
n diameter fabricated by using electron beam lithography and reactive
ion etching were characterized by Raman spectroscopy. Clear evidence o
f process-induced strain relief was found in addition to the observati
on of features from enhanced multi-phonons and Si-Si1-xGex intermixing
arising from the process-induced crystal symmetry breakdown in the na
nostructured quantum dots.