THIN OXIDE ON SI

Charge trapping phenomena and TDDB characteristics in thin gate SiO2 f ilm of advanced MOS devices have been investigated. The electron trapp ing is strongly related to the SiOH or SIH bond in the SiO2 films, whi le the hole trapping is caused by formation of oxygen vacancy in the S iO2. There is a seesaw relationship between the hole trap density and the electron trap density, and accordingly, we can not expect to reduc e the electron trap and the hole trap simultaneously. We found that th e oxynitridation of SiO2 film decreased both the electron traps and th e hole traps in the SiO2. This oxynitried SiO2 gate dielectric improve d in the programming time degradation during program/erase cyclic oper ations of the flash-memory.