LOW-TEMPERATURE CRYSTALLIZATION OF ALPHA-SI FILM BY METAL CONTACT

Authors
PARK KC CHUN SC SONG KJ JANG J
Citation
Kc. Park et al., LOW-TEMPERATURE CRYSTALLIZATION OF ALPHA-SI FILM BY METAL CONTACT, Journal of the Korean Physical Society, 28, 1995, pp. 71-74
Citations number
9
Categorie Soggetti
Physics
Journal title
Journal of the Korean Physical Society → ACNP
ISSN journal
03744884
Volume
28
Year of publication
1995
Supplement
S
Pages
71 - 74
Database
ISI
SICI code
0374-4884(1995)28:<71:LCOAFB>2.0.ZU;2-#
Abstract
We have studied the crystallization of amorphous Si by using Si-Al bi- layer. The effects of annealing temperature and annealing time on the structural properties of the poly-Si films have been investigated. We obtained poly-Si with approximate to 100% crystalline volume fraction, obtained from Raman spectroscopy, by annealing at below 300 degrees C . And the films have prefered Si(111) orientation and crystalline Al p eak was not observed. The average grain size of the poly-Si was found to be approximate to 2000 Angstrom.