Photoluminescence and photoreflectance measurements were carried out i
n order to investigate the effects of neutron irradiation induced defe
cts in neutron-transmutation-doped (NTD) GaAs. The damages to the crys
tallinity of NTD GaAs were recovered by annealing, and the remaining d
efects in the annealed NTD GaAs were passivated by hydrogenation. When
the transmutation-doped impurities in GaAs were compensated by the in
jection of hydrogen atoms, Franz-Keldysh oscillations appeared due to
the large variation in the surface electric field.