ZnTe-Cd1-xMnxTe1-ySey heterojunctions were prepared by vapor-transport
epitaxy of ZnTe on In-doped Cd1-xMnxTe1-ySey (x = 0.05, y = 0.03) sin
gle crystalline substrate in vacuum. At temperatures lower than 120 K
the infrared and red electroluminescence were observed from the ZnTe-C
d1-xMnxTe1-ySey diode with forward current density in the range 0.003-
4.0 A/cm(2).