DENSITY OF GAP STATES DECONVOLUTED FROM PHOTOCONDUCTIVE SPECTRA FOR UNDOPED AMORPHOUS-SILICON AND SILICON-CARBON THIN-FILMS

Density of states in amorphous hydrogenated silicon and silicon-carbon thin films were calculated by deconvolution of the optical absorption coefficient cu measured by constant photocurrent method. Addition of carbon to silicon lattice increases the optical band-gap and influence s the distribution of defect states in the gap.