PHOTOLUMINESCENCE, REFLECTIVITY AND RAMAN INVESTIGATIONS OF NANOCRYSTALLITES IN LUMINESCENT POROUS SILICON

Authors
BALA W GLOWACKI G LUKASIAK Z DROZDOWSKI M KOZIELSKI M NOSSARZEWSKAORLOWSKA E BRZOZOWSKI A
Citation
W. Bala et al., PHOTOLUMINESCENCE, REFLECTIVITY AND RAMAN INVESTIGATIONS OF NANOCRYSTALLITES IN LUMINESCENT POROUS SILICON, Acta Physica Polonica. A, 87(2), 1995, pp. 445-448
Citations number
10
Categorie Soggetti
Physics
Journal title
Acta Physica Polonica. A → ACNP
ISSN journal
05874246
Volume
87
Issue
2
Year of publication
1995
Pages
445 - 448
Database
ISI
SICI code
0587-4246(1995)87:2<445:PRARIO>2.0.ZU;2-3
Abstract
Raman scattering, reflectivity and photoluminescence measurements of t he porous silicon layers prepared on (001) p/p(+) silicon epitaxial wa fers by anodization method are presented. We have studied dependence o f the frequency shift and halfwidth of LO mode in Raman spectra and sh ift of the luminescence peak in photoluminescence spectra vs. anodizat ion conditions.