PHOTOLUMINESCENCE AND DOUBLE-CRYSTAL X-RAY STUDY OF INGAAS INP - EFFECT OF RARE-EARTH (DYSPROSIUM) ADDITION DURING LIQUID-PHASE EPITAXIAL-GROWTH/

High purity In0.53Ga0.47 As layers were grown on semi-insulating InP:F e substrates by liquid phase epitaxy by adding small amounts of dyspro sium (rare earth) to the melt. Hall effect and photoluminescence measu rements showed that the addition of Dy strongly reduced the carrier an d residual donor concentration, with a concurrent shift of the exciton ic luminescence toward higher energies. The observed effects are ascri bed to the gettering of residual donor impurities in the melt by Dy, a s well as to the effects of possible incorporation of Dy into the grow n layers.