STIMULATION OF CRYSTALLINE LATTICE STABILIZATION OF GA-IN-P-AS LAYERSDURING HETEROEPITAXY

Every process of heteroepitaxial synthesis from liquid phase of A(III) B(V) compounds is based on the contact of saturated solution with the binary substrate. The initial difference in the crystalline lattice pa rameters or in the radii of mutually substituting atoms of the interfa ce causes the shift of the thermodynamic balance point of the system. The change in the total energy of the system connected with this effec t causes the deviation of the actual composition of the crystallising solution with respect to the planed one. In the present paper there ar e shown the results of the theoretical and experimental analysis of th e effect of InP substrates on parameters of the GaxIn1-xPyAs1-y layer crystallised from liquid phase.