TEMPERATURE STUDY OF PHOTOLUMINESCENCE FROM DEEP CDTE CD1-XMNXTE QUANTUM-WELLS/

The photoluminescence studies in CdTe/CdMnTe quantum wells are reporte d in the temperature range 10-300 K. The MnTe concentration in the bar riers is x = 0.3, 0.5, 0.63 and 0.68. Thus tile potential wells in our samples are very deep, of the order of approximate to 800 meV in the conduction band and approximate to 200 meV in the valence band in the case of the x = 0.68 sample. In spite of the large lattice mismatch (r elated to high x value) between the wells and the barriers the observe d line widths are as narrow as 2 meV in the case of 100 Angstrom. Clea r manifestations of internal strain are observed. In particular, the t emperature coefficient of the luminescence energies shows strong depen dence on the width of wells.