6- GHZ LNAS USING COMMERCIALLY AVAILABLE PM HEMTS

Four- and six-stage 60 GHz low noise high electron mobility transistor (HEMT) amplifiers have been designed and tested The designs are based on scattering and noise parameters of a commercially available 0.25 m u m gate length pseudomorphic (PM) HEMT, extrapolated from 18 to 60 GH z using two noise models. The four-stage amplifier has a room temperat ure noise figure of 4.8 dB with an associated gain of 15.1 dB at 60.2 GHz. The six-stage amplifier has a room temperature noise figure of 4. 9 dB with an associated gain of 21.7 dB at 61 GHz. Maximum gain of the six-stage amplifier was 26.9 dB at 59 GHz.